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Harpreet Singh Jattana

Harpreet Singh Jattana
Harpreet Singh Jattana
 
PhD - Pursuing (Microelectronics – SOI CMOS Process Integration & Modelling), IIT Roorkee

Contact Details

 
079-68261718
 
# 3110, FB-3, DA-IICT, Gandhinagar, Gujarat, India – 382007

Biography

Have hands-on experience (more than 37 years) in the following areas of microelectronics:

CMOS Process development and Integration (SOI, HV, BiPolar, NVM, OTP)

VLSI Design for Space/Military applications

Radiation hardened Technology for VLSI products.

CMOS fabrication and Mass production

Device reliability and failure modes

IC testing, characterization, Packaging and Qualification

Failure Analysis of CMOS

Project planning, execution and Management

Materials management, procurement.

Equipment specifications formulation, technical comparison

ToT related issues – Device types, process details, unit recipes, Tech vehicle, IPs, design flows etc.

MEMS Cantilever and Z-measurement MEMS device for Biomedical applications

Subject Knowledge & Understanding

Non conventional MOS devices

Lower Node Technology (incl products and markets)

VLSI Packaging ( Ceramic, Plastic, Small-outline, 2D, MCM,2.5D)

MEMS Design

MEMS Fabrication (Surface & Bulk Micromachining, LEGA)

Compound Semiconductors (GaN, GaAs based devices)

Medical Devices

Clinical Validation

Teaching Semiconductor courses (MTech, BTech )

Specialization

CMOS Process Development, Device Reliability, CMOS Design, Compound Semiconductors, VLSI Testing & Packaging, Wafer Fabrication

Publications

Sr No. Title Journal Month and Year
1 L style n- MOSFET Layout for Mitigating TID Effects Springer
http://doi.org/10.1007/s12633-021-01150-z
May 2021
2 Effect of optical parameters on design of highly reflecting distributed Bragg reflectors based on compound semiconductors for space  applications Material science
http://doi.org/10,1007/s12034-021-02356-y
March 2021
3 Transient response of 0.18mm SOI MOSFETS and SRAM bit-cells to heavy-Ion irradiation for variable SOI film thickness. IEEE Transactions on Electron Devices Vol 66 No.11, Nov 2018
4 A physics based variability –aware methodology to estimate critical charge for near-threshold voltage latches. IEEE Transactions on Electron Devices Vol 27 No.9 Sept 2019
5 Source Underlap – A novel technique to Improve sate operating area and output-conductance in LDMOS transistors IEEE Transactions on Electron Devices Vol 66, No. 11 Nov 2019
6 Addressable Synchronous Asynchronous Differential Receiver Design in 0.18um CMOS ISED 2021 2021
7 Development of Low cost Silicon BJT Technology and Modelling ICEE 2020 at IIT Delhi Dec 2020
8 SPICE Based compact modelling of a spiral Inductor and MIM capacitor for RF circuit simulations ICEE 2020 at IIT Delhi Dec 2020
9 Modeling of 0.18mm RF Bulk and SOI Planar MOSFETs using Industry Standard BSIM Models ICEE 2020 at IIT Delhi Dec 2020
10 Verilog – A SPICE Model of PECVD SiO2 OTP Memory Device IEEE International Conference on modelling of systems circuits and Devices Jan 2019
11 Hi Rel ASIC Design and Development – A case study IEEE International  Conference ICECA Jan 2018
12 Technology development of High Gain BJT to enable 180nm BiCMOS technology IWPSD Oct 2017
13 Simple PE CVD SiO2 OTP memory based PUF for 180nm node for IoT. 75th Annual Device research Conference DRC Jan 2017
14 Comparative Simulation Analysis of Process Parameter Variation in 20nm Triangular FinFET Active and Passive Electronic Components Journal Oct 2017
15 Design & Development of High Speed LVDS Receiver with Cold-Spare VDAT, Communications in Computer and Information Science July 2016
16 Accurate analysis of settling error in CDS Integrator based Sigma Delta Modulator, IEEE INDICON International Conference Sept 2015
17 SCL 180nm CMOS Foundry – High Reliability ASIC design for aerospace applications 19th VDAT May 2015
18 Design, Implementation and Performance Evaluation of LVDS Transmitter Journal of Spacecraft Technology July 2014
  • 21 Technical papers in “Compendium of Research work “(ISRO)
  • Accurate analysis of settling error in CDS integrator based Sigma delta modulator INDI-CON 2015
  • Simple PE CVD SIo2 OTP Memory based PUF for 180nm node for IOT: 75th Annual de-vice research conference DRC
  • Technology development of high gain BJT 180nm BiCMOSTechnology : IWPSD 2017
  • IEEE Transactions on Electron Devices page 4826, Vol 66 Nov 2018.Number 11: Transi-ent response of 0.18 um SOI MOSFETS and SRAM bit-cells to heavy-ion Irritation for variable SOI film thickness.

Conference Proceedings:

  • 21 TECHNICAL PAPERS IN “COMPENDIUM OF RESEARCH WORK “(ISRO)

Teaching

Have taught the following courses to MTech/PhD /Btech students at IIST Trivandrum, Manipal University Jaipur, EICT IIT Guwahati, WPU Pune, NIRMA University and MNIT Jaipur

  • Device Physics
  • CMOS Analog Design
  • VLSI Microfabrication
  • VLSI Digital design, including Low Power design
  • Design of Data Converters (ADCs, DAC, PGA)
  • Physical design Implementation
  • Device Modelling, characterization and Failure modes of MOS Tx
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