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Pankaj Kumar

Pankaj Kumar
Pankaj Kumar
 
PhD (RF & Microwave), NIT Patna

Contact Details

 
079-68261705
 
# 3201, FB-3, DA-IICT, Gandhinagar, Gujarat, India – 382007

Biography

Pankaj Kumar received the B.Tech. degree in Electronics and Communication Engineering from Ujjain Engineering College, Ujjain, India in 2011; his M.Tech degree from PDPM Indian Institute of Information Technology Design and Manufacturing, Jabalpur, India in 2014; his Ph.D. from National Institute of Technology Patna, Bihar, India in 2021 under the supervision of Prof. P. K. Jain (IIT BHU) and Prof. Akhlesh Lakhtakia (The Pennsylvania State University, USA). He has worked at NIT Patna as Assistant Professor almost for five years.

Specialization

Bio-Inspired Metasurface/Metamaterial Devices, Terahertz Devices, Semiconductor Device Modeling and Simulation, Emerging Devices, JLT, OFET, TFET, FIN-FET, VLSI Design.

Publications

Journals:

  • Kumar Pankaj, Lakhtakia Akhlesh, and Jain Pradip Kumar, “Graphene pixel-based polarization-insensitive metasurface for almost perfect and wideband terahertz absorption”, Journal of the Optical Society of America B, 36, F84-F88, 2019. (impact Factor: 2.18, Q-2, Optical Society of America)
  • Kumar Pankaj, Lakhtakia Akhlesh, and Jain Pradip Kumar, “Tricontrollable pixelated metasurface for absorbing terahertz radiation”, Applied Optics, 58, 9614-9623, 2019. (Impact Factor :1.961, Q-1, Optical Society of America)
  • Kumar Pankaj, Lakhtakia Akhlesh, and Jain Pradip Kumar, “Tricontrollable pixelated metasurface for stopband for terahertz radiation”, Journal of Electromagnetic Waves and Applications, 34, 2065-2078, 2020. (Impact Factor :1.4, Q-3, Tylor and Francis)
  • Kumar Pankaj, Rai Smriti, Bhattacharyya Somak, Lakhtakia Akhlesh, and Jain Pradip Kumar, “Graphene-sandwich metasurface as a frequency shifter, switch, and isolator at terahertz frequencies”, Optical Engineering, 59, 110501-8, 2020. (Impact Factor:1.084, Q-2, SPIE)
  • Raj Anamika, Kumar Keshab, and Kumar Pankaj, “CMOS realization of OTA based tunable grounded meminductor”, Analog Integrated Circuits and Signal Processing,107, 475-482, 2021. (Impact Factor:1.337, Q-3, Springer)
  • Nr Shaleen, Singh Sangeeta, and Kumar Pankaj, “Si 1− x Ge x nanowire based metal-semiconductor-metal Schottky biristor: Design and sensitivity analysis”, IET Circuits Devices & Systems, 15,745-754, 2021. (Impact Factor:1.290, Q-3, IET-Wiley)
  • Raj Anamika, Singh Sangeeta, and Kumar Pankaj, “Electronically tunable high frequency single output OTA and DVCC based meminductor”, Analog Integrated Circuits and Signal Processing, 109, 47-55, 2021. (Impact Factor:1.337, Q-3, Springer)
  • Kumar Bhaskar, Gupta Bharat, Singh Sangeeta, and Kumar Pankaj, “FIN Junctionless Field Effect Transistor (FIN-JLFET) with Ground Plane for Surpassing Parasitic BJT Action”, Silicon, 43, 1-9, 2021. (Impact Factor:2.670, Q-3, Springer)
  • Nr Shaleen, Singh Sangeeta, and Kumar Pankaj, “Ultra-sensitive Label-Free Electrical Detection of Charged Bio-molecules Using Metal-Semiconductor-Metal Schottky Silicon Nanowire Biristor”, Journal of Computational Electronics, 21, 86-93, 2022. (Impact Factor:1.807, Q-2, Springer)
  • Raj Anamika, Singh Sangeeta, and Kumar Pankaj, “Dual Mode High Frequency and Power Efficient Grounded Memristor Based on OTA and DVCC”, Analog Integrated Circuits and Signal Processing, 110, 81-89, 2022. (Impact Factor:1.337, Q-3, Springer)
  • Niharika Neha, Singh Sangeeta, and Kumar Pankaj, “Multifunctional Metasurface based Bandstop and Bandpass Filters for Terahertz Radiation”, Optik, 253, 168551, 2022. (Impact Factor: 2.443, Q-2, Elsevier)
  • Kumar Raghwendra, Kumar Pankaj, “Fabry-Pérot cavity resonance based metamaterial absorber for refractive index sensor at infrared frequencies”, Optics Communications, 2022. (Impact Factor: 2.31, Q-2, Elsevier).
  • Sharma Govindam, Kumar Pankaj, Lakhtakia Akhlesh, and Jain Pradip Kumar, “Pixelated bicontrollable metasurface absorber tunable in complete X band”, Journal of Electromagnetic Waves and Applications, 2022. (Impact Factor :1.4, Q-3, Tylor and Francis)
  • Shrivastava Anup, Shivani Saini, Kumar Pankaj, and Sanjai Singh, “A potential absorber for PHz electronics using Sn/h-BN Van der Waals structure: A hybrid DFT and microscopic investigations”, Physica E:Low-dimensional Systems and Nanostructures, 144, 115423, 2022. (Impact Factor :3.38, Q-2, Elsevier)
  • Raj Anamika, Singh Sangeeta, and Kumar Pankaj, “Simulation based analysis of low-voltage-tunable biquad filter using operational transconductance amplifiers”, International Journal of Electronics Letters, 2022. (Impact Factor:0.91, Q-4, Taylor & Francis).
  • Agrahari Rajan, Kumar Pankaj, and Vikram Kumar, “Pixelated Metasurface based Wideband Cross Polarization Converter”, Journal of Electromagnetic Waves and Applications, 2022. (Impact Factor :1.4, Q-3, Tylor and Francis)

Conferences:

  • Kumar Raghwendra, Kumar Pankaj, Angle-dependent switching in metamaterials absorber at infrared frequencies, XLV symposium of Optical Society of India, Conference on optics, Photonics and Quantum Optics (COPaQ 2022), IIT Roorkee.
  • Kumar Pankaj, Lakhtakia Akhlesh, Jain Pradip Kumar, Rai Smriti, and Bhattacharyya Somak, Progress towards bioinspired multicontrollable and multifunctional metasurfaces, Proceedings of SPIE, 2021, 115860H, California, USA.
  • Kumar Pankaj, Lakhtakia Akhlesh, and Jain Pradip Kumar, Pixel-based metaatom design of graphene-metasurface absorber for terahertz waves, Proceedings of SPIE, 2019, 10917V, California, USA.
  • Kumar Pankaj, Singh Sangeeta and Kondekar P. N., Transient Analysis & Performance Estimation of Gate Inside Junctionless Transistor (GI-JLT), 24th GLSVLSI, 2014, Texas, USA.
  • Kumar Pankaj, Sahu Chitrakant, Shrivastava Anup, Kondekar P. N., and Singh Jawar, Characteristics of gate inside junctionless transistor with channel length and doping concentration, IEEE International conference on Electron Devices and Solid-State and Circuits (EDSSC13), 2013, Hong Kong.
  • Kumar Pankaj, Singh Sangeeta, Kondekar P. N., and Dixit Ankit, Digital and analog performance of gate inside p-type junctionless transistor (GI-JLT), IEEE 5th International Conference on Computational Intelligence, Modeling and Simulation (CIMSim2013), 2013, Seoul, South Korea.
  • Kumar Pankaj, Singh Sangeeta, Kondekar P. N.,and Agarwal Ishu, Characteristic and Sensitivity of Gate Inside Junctionless Transistor (GI-JLT), 20th IEEE International Conference on Electronics, Circuits, and Systems (ICECS-2013), 2013, Abu Dhabi, UAE.
  • Kumar Pankaj, Singh Sangeeta, Gupta N., Modi B. and Singh N.P., Silicon v/s Germanium in Gate All Around Junctionless Nanowire Transistor (GAA-JLT), IEEE 2nd International Conference on Devices, Circuits and Systems (ICDCS-2014), 2013, Tamil Nadu, India.
  • Dixit Ankit, Singh Sangeeta, Kondekar P.N., and Kumar Pankaj, Parameter Optimizations of Lateral Impact MOS, IEEE Students’ Technology Symposium (IEEE TechSym 2014), 2014, IIT Kharagpur, India.
  • Singh A.P., Singh Sangeeta, Kondekar P.N., Singh A., and Kumar Pankaj, Structural Analysis Mathematical Modeling of Gate Inside Organic Field Effect Transistors (GI-OFET)- A Novel Device Structure, IEEE 4th Student’s Conference on Engineering and Systems, 2015, MNNIT Allahabad, India.

Teaching

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